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UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1
Power MOSFET
TO- 251
1
TO-252
1
TO-220
FEATURES
* RDS(ON) = 3.8@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
1
TO-220F
*Pb-free plating product number: 2N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube
2N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR
Power MOSFET
RATINGS UNIT 600 V 30 V 2.0 A TC = 25C 2.0 A ID Drain Current Continuous TC = 100C 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25C 45 W Total Power Dissipation PD Derate above 25C 0.36 W/ Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD 2.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL JA RATINGS 112 112 54 54 12 12 4 4 UNIT
/W
Thermal Resistance Junction-Case
Jc
ELECTRICAL CHARACTERISTICS (TJ =25 , unless Otherwise specified.)
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Body Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN 600 10 100 100 -100 0.4 2.0 3.8 2.25 270 40 5 4.0 5 TYP MAX UNIT V A A nA nA V/ V S pF pF pF
BVDSS/ ID = 250 A TJ VGS(TH) VDS = VGS, ID = 250A RDS(ON) VGS = 10V, ID =1A gFS VDS = 50V, ID = 1A (Note 1) CISS COSS CRSS
VDS =25V, VGS =0V, f =1MHz
350 50 7
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time tD (ON) Rise Time tR VDD =300V, ID =2.4A, RG=25 Turn-Off Delay Time tD(OFF) (Note 1,2) Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS = 0 V, ISD = 2.4A, Reverse Recovery Time tRR di/dt = 100 A/s (Note1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle2% 2. Essentially Independent of Operating Temperature MIN
Power MOSFET
TYP 10 25 20 25 9.0 1.6 4.3
MAX 30 60 50 60 11
UNIT ns ns ns ns nC nC nC V A A ns C
1.4 2.0 8.0 180 0.72
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 12V 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 3mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RD
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-Region Characteristics
Top: V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm : 5.5V
Power MOSFET
Transfer Characteristics VDS=50V 250 s Pulse Test
Drain Current, ID (A)
10 0
Drain Current, I D (A)
85 10
0
25 -20
10 -1
10
-2
250 s Pulse Test TC=25 100 101
10
-1
10-1
2
4
6
8
10
Drain-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs Drain Current and . Gate Voltage
Body Diode Forward Voltage Variationvs. Source Current and Temperature VGS=0V 250 s Pulse Test
Drain-Source On-Resistance, R DS(ON) ( )
12 10 8 6 4 2 0
TJ=25 VGS=20V
Reverse Drain Current, IDR (A)
VGS=10V
100 125 25
0
1
2
3
4
5
6
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage 500 400 Capacitance (pF) Ciss 300 Coss 200 100 0 Crss VGS=0V f = 1MHz 10
-1
Gate Charge vs. Gate Charge Voltage 12 VDS=120V Gate-Source Voltage, VGS (V) 10 8 6 4 2 0 ID=2.4A 0 2 4 6 8 1 0 VDS=300V VDS=480V
Ciss=CGS+CGD (CDS=shorted) Coss=CDS+CGD Crss=CGD
10
0
10
1
Drain-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs Temperature . 1.2
Power MOSFET
On -Resistance vs. Temperature 3.0 V =10V GS ID=4.05A 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 200
Drain-Source Breakdown Voltage, VDSS (Normalized)
1.1
1.0
0.9
0.8 -100 -50
0
50
100
150
200
Drain-Source On-Resistance, R DS(ON) (Normalized)
VGS=10V ID=250 A
0
50
100
150 )
Junction Temperature, TJ ( )
Junction Temperature, T J (
Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Drain Current, ID (A) Drain Current, ID (A) 10 1 100 s 10 s 1ms 10m Ds C TC=25 TJ=125 Single Pulse 100 101 102 103 2.0
Max. Drain Current vs. Case Temperature
1.5
100
1.0
10 -1
0.5
10 -2
0.0 25 50 75 100 125 ) Case Temperature, TC (
150
Drain-Source Voltage, VDS (V)
Thermal Response
(t)
JC
100
D=0.5 0.2 0.1 0.05
/W Max. JC (t) = 2.78 Duty Factor, D=t1/t2 TJM -TC=PDMx JC (t)
Thermal Response,
10
-1
0.02 0.01 Single pulse PDM t1 t2 10-2 10-1 10
0
10-5
10-4
10-3
10
1
Square Wave Pulse Duration t1 (s) ,
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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